Constricted nanowire with stabilized magnetic domain wall

R. Sbiaa*, M. Al Bahri

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.

Original languageEnglish
Pages (from-to)113-115
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - Aug 1 2016


  • Domain wall memory
  • Magnetic domain
  • Magnetization reversal
  • Micromagnetism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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