TY - JOUR
T1 - Constricted nanowire with stabilized magnetic domain wall
AU - Sbiaa, R.
AU - Al Bahri, M.
N1 - Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.
PY - 2016/8/1
Y1 - 2016/8/1
N2 - Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.
AB - Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory.
KW - Domain wall memory
KW - Magnetic domain
KW - Magnetization reversal
KW - Micromagnetism
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U2 - 10.1016/j.jmmm.2016.03.043
DO - 10.1016/j.jmmm.2016.03.043
M3 - Article
AN - SCOPUS:84961924313
SN - 0304-8853
VL - 411
SP - 113
EP - 115
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
ER -