Tuning of perpendicular exchange bias for magnetic memory applications

H. Meng*, V. B. Naik, R. Sbiaa

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Perpendicular exchange bias (PEB) between [Co 0.3 nm/Pd 0.8 nm]5 multilayers and IrMn antiferromagnetic (AFM) layer is studied as functions of thickness of the interface layer and the AFM layer. It is found that increasing the thickness of a CoFe interface layer up to 2.1 nm could effectively improve the PEB. The achieved PEB field (Hbias) is more than 500 Oe. On the other hand, the coercivity (Hc) exhibits an opposite trend as a function of CoFe interface layer thickness, which might promote the integration of PEB structure with the perpendicular magnetic memory stack. It is also found that PEB is sensitive to the thickness of the AFM layer. The thickness window is only around 2 nm to achieve the largest Hbias. Moreover, for a very thin IrMn layer, a ferromagnetic nature is observed at low magnetic fields, which is likely owing to the net spins at the surface that might have been magnetized by the CoFe interface layer.

Original languageEnglish
Pages (from-to)391-394
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number2
Publication statusPublished - Feb 2013


  • exchange bias
  • magnetic memory
  • perpendicular magnetic anisotropy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Surfaces and Interfaces


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