TY - JOUR
T1 - The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer
AU - Jamil, Tariq
AU - Usman, Muhammad
AU - Malik, Shahzeb
AU - Jamal, Habibullah
N1 - Funding Information:
The authors would like to thank Ghulam Ishaq Khan Institute of Engineering Sciences and Technology for providing the technical resources.
Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature.
PY - 2021/5
Y1 - 2021/5
N2 - The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with quaternary last quantum barrier (QLQB) and step-graded electron blocking layer (EBL) are investigated numerically. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are remarkably improved with AlInGaN step-graded EBL and QLQB as compared to conventional or ternary AlGaN EBL and last quantum barrier (LQB). This significant improvement is assigned to the optimal recombination of electron–hole pairs in the multiple quantum wells (MQWs). It is due to the decrease in strain and lattice mismatch between the epi-layers which alleviates the effective potential barrier height of the conduction band and suppressed the electron leakage without affecting the holes transportation to the active region. Moreover, to figure out quantitatively, the electron and hole quantity increased by ~ 25% and ~ 15%, respectively. Additionally, the IQE and radiative recombination rate are enhanced by 48% and 55%, respectively, as compared to conventional LED. So, we believe that our proposed structure is not only a feasible approach for achieving highly efficient DUV LEDs, but the device physics presented in this study establishes a fruitful understanding of III nitride-based optoelectronic devices.
AB - The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with quaternary last quantum barrier (QLQB) and step-graded electron blocking layer (EBL) are investigated numerically. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are remarkably improved with AlInGaN step-graded EBL and QLQB as compared to conventional or ternary AlGaN EBL and last quantum barrier (LQB). This significant improvement is assigned to the optimal recombination of electron–hole pairs in the multiple quantum wells (MQWs). It is due to the decrease in strain and lattice mismatch between the epi-layers which alleviates the effective potential barrier height of the conduction band and suppressed the electron leakage without affecting the holes transportation to the active region. Moreover, to figure out quantitatively, the electron and hole quantity increased by ~ 25% and ~ 15%, respectively. Additionally, the IQE and radiative recombination rate are enhanced by 48% and 55%, respectively, as compared to conventional LED. So, we believe that our proposed structure is not only a feasible approach for achieving highly efficient DUV LEDs, but the device physics presented in this study establishes a fruitful understanding of III nitride-based optoelectronic devices.
KW - AlInGaN
KW - DUV LEDs
KW - Efficiency
KW - Optoelectronic performance
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U2 - 10.1007/s00339-021-04559-w
DO - 10.1007/s00339-021-04559-w
M3 - Article
C2 - 33967404
AN - SCOPUS:85105357648
SN - 0947-8396
VL - 127
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 5
M1 - 397
ER -