Resonant tunneling diode circuits using Pspice

A. Sellai*, H. Al-Hadhrami, S. Al-Harthy, M. Henini

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The measured I-V data and the large-signal equivalent circuit of a resonant tunneling diode are exploited, through the analog behavioral modeling capabilities of Pspice, to create a Pspice compatible model for the diode. The model is used, with very few other components, in the simulation of a number of circuit applications including a sinusoidal wave generator, a frequency multiplier and three state logic circuits. The simulated circuit details, the related waveforms and three-state logic operations are described. The circuits are characterized mainly by their reduced complexity and ease of analysis.

Original languageEnglish
Pages (from-to)741-745
Number of pages5
JournalMicroelectronics Journal
Issue number5-8
Publication statusPublished - May 2003


  • Multi-level logic
  • Pspice
  • Resonant Tunneling Oiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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