Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film

Elias Said, Xavier Crispin, Lars Herlogsson, Sami Elhag, Nathaniel D. Robinson, Magnus Berggren

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A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (
Original languageEnglish
Pages (from-to)143507
JournalApplied Physics Letters
Issue number14
Publication statusPublished - Oct 1 2006


  • Field effect devices
  • Capacitors

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