Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film

Elias Said; Xavier Crispin; Lars Herlogsson; Sami Elhag; Nathaniel D. Robinson; Magnus Berggren

doi:10.1063/1.2358315

Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film

Elias Said, Xavier Crispin, Lars Herlogsson, Sami Elhag, Nathaniel D. Robinson, Magnus Berggren

Microbiology & Immunology

Research output: Contribution to journal › Article › peer-review

91 Citations (Scopus)

Abstract

A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (

Original language	English
Pages (from-to)	143507
Journal	Applied Physics Letters
Volume	89
Issue number	14
DOIs	https://doi.org/10.1063/1.2358315
Publication status	Published - Oct 1 2006

Keywords

Field effect devices
Capacitors

Access to Document

10.1063/1.2358315

http://adsabs.harvard.edu/abs/2006ApPhL..89n3507S

Cite this

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title = "Polymer field-effect transistor gated via a poly(styrenesulfonic acid) thin film",

abstract = "A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (",

keywords = "Field effect devices, Capacitors",

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AU - Said, Elias

AU - Crispin, Xavier

AU - Herlogsson, Lars

AU - Elhag, Sami

AU - Robinson, Nathaniel D.

AU - Berggren, Magnus

PY - 2006/10/1

Y1 - 2006/10/1

N2 - A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (

AB - A polyanionic proton conductor, named poly(styrenesulfonic acid) (PSSH), is used to gate an organic field-effect transistor (OFET) based on poly(3-hexylthiophene) (P3HT). Upon applying a gate bias, large electric double layer capacitors (EDLCs) are formed quickly at the gate-PSSH and P3HT-PSSH interfaces due to proton migration in the polyelectrolyte. This type of robust transistor, called an EDLC-OFET, displays fast response (

KW - Field effect devices

KW - Capacitors

U2 - 10.1063/1.2358315

DO - 10.1063/1.2358315

M3 - Article

SN - 0003-6951

VL - 89

SP - 143507

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -