Performance enhancement with thin p-AlInN electron-blocking layer in ultraviolet light-emitting diodes

Muhammad Usman*, Tariq Jamil, Muhammad Aamir, Abdullrahman Abdullah Alyemeni

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


III-nitride ultraviolet light-emitting diodes (UV LEDs) face low carrier confinement and poor p-doping. In this study, we propose a thin AlInN electron-blocking layer (EBL) in UV LEDs instead of conventional AlGaN EBL. Numerical results demonstrate that UV LED with thin AlInN enhances the optoelectronic performance. The results also reveal that AlGaN EBL is more sensitive to p-doping as compared to AlInN EBL. Thin AlInN layer facilitates hole transportation through intra-band tunneling. Moreover, AlInN has a high conduction band offset that suppresses the electron leakage effectively. Hence, the carrier radiative recombination rate considerably enhances with thin AlInN EBL. The efficiency droop in the proposed LED is also alleviated.

Original languageEnglish
Article number017106
JournalOptical Engineering
Issue number01
Publication statusPublished - Jan 1 2023


  • AlInN electron blocking layer
  • efficiency
  • p-doping
  • ultraviolet light-emitting diodes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • General Engineering

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