Path to achieve sub-10-nm half-pitch using electron beam lithography

A. K.G. Tavakkoli, S. N. Piramanayagam, M. Ranjbar, R. Sbiaa, T. C. Chong

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Achieving dense patterns with good resolution is a key step for several applications in micro- and nanoelectronics. Based on the mechanical strength and capillary forces between nanometer scale features, the authors have proposed that the use of thin resist is a solution to achieve dense array of patterns. Therefore, the authors have studied the effect of resist thickness on the resolution of dense patterns for both lines and dots. Based on the experimental results using hydrogen silsesquioxane resist, dense patterns with sub-10-nm half-pitch were achieved. The authors also propose a new method for calculating contrast for nanostructures.

Original languageEnglish
Pages (from-to)110351-110357
Number of pages7
JournalJournal of Vacuum Science and Technology B
Issue number1
Publication statusPublished - Jan 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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