Optimization procedure for the design of ultrafast, highly efficient and selective resonant cavity enhanced Schottky photodiodes

Joseph A. Jervase; Hadj Bourdoucen

doi:10.1109/16.842957

Optimization procedure for the design of ultrafast, highly efficient and selective resonant cavity enhanced Schottky photodiodes

Joseph A. Jervase, Hadj Bourdoucen

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

An expression of quantum efficiency for high-speed resonant-cavity-enhanced (RCE) Schottky photodiodes is derived. This expression includes the structural and the physical parameters of the photodetector and takes into account the parameters of the metallic Schottky mirror and the wavelength dependence of the reflectivities. The metal layer thickness sets the maximum achievable quantum efficiency as it decays exponentially with it. The antireflection coating layer, on the other hand, determines the photodetector selectivity and the optimum absorption layer thickness that maximizes its quantum efficiency. An algorithm for the design and optimization of RCE Schottky photodetectors has been developed. Theoretical values of 647 GHz and 129 GHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02 μm gold layer.

Original language	English
Pages (from-to)	1158-1165
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	47
Issue number	6
DOIs	https://doi.org/10.1109/16.842957
Publication status	Published - 2000

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.842957

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abstract = "An expression of quantum efficiency for high-speed resonant-cavity-enhanced (RCE) Schottky photodiodes is derived. This expression includes the structural and the physical parameters of the photodetector and takes into account the parameters of the metallic Schottky mirror and the wavelength dependence of the reflectivities. The metal layer thickness sets the maximum achievable quantum efficiency as it decays exponentially with it. The antireflection coating layer, on the other hand, determines the photodetector selectivity and the optimum absorption layer thickness that maximizes its quantum efficiency. An algorithm for the design and optimization of RCE Schottky photodetectors has been developed. Theoretical values of 647 GHz and 129 GHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02 μm gold layer.",

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AU - Jervase, Joseph A.

AU - Bourdoucen, Hadj

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N2 - An expression of quantum efficiency for high-speed resonant-cavity-enhanced (RCE) Schottky photodiodes is derived. This expression includes the structural and the physical parameters of the photodetector and takes into account the parameters of the metallic Schottky mirror and the wavelength dependence of the reflectivities. The metal layer thickness sets the maximum achievable quantum efficiency as it decays exponentially with it. The antireflection coating layer, on the other hand, determines the photodetector selectivity and the optimum absorption layer thickness that maximizes its quantum efficiency. An algorithm for the design and optimization of RCE Schottky photodetectors has been developed. Theoretical values of 647 GHz and 129 GHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02 μm gold layer.

AB - An expression of quantum efficiency for high-speed resonant-cavity-enhanced (RCE) Schottky photodiodes is derived. This expression includes the structural and the physical parameters of the photodetector and takes into account the parameters of the metallic Schottky mirror and the wavelength dependence of the reflectivities. The metal layer thickness sets the maximum achievable quantum efficiency as it decays exponentially with it. The antireflection coating layer, on the other hand, determines the photodetector selectivity and the optimum absorption layer thickness that maximizes its quantum efficiency. An algorithm for the design and optimization of RCE Schottky photodetectors has been developed. Theoretical values of 647 GHz and 129 GHz were obtained, respectively, for the carrier-transit time limited 3-dB bandwidth and bandwidth-efficiency product for an RCE Schottky photodetector with a 0.02 μm gold layer.

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Optimization procedure for the design of ultrafast, highly efficient and selective resonant cavity enhanced Schottky photodiodes

Abstract

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