Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Research output: Contribution to journalReview articlepeer-review

7 Citations (Scopus)


In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin-based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin-based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.
Original languageEnglish
Article number2100125
Pages (from-to)2100125
Number of pages9
JournalPhysica Status Solidi - Rapid Research Letters
Issue number7
Publication statusPublished - May 31 2021


  • magnetic domain walls
  • magnetic random access memory
  • memristors
  • multibit per cell memory
  • neuromorphic computing
  • spin-transfer torque

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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