Multi-level domain wall memory in constricted magnetic nanowires

R. Sbiaa*, S. N. Piramanayagam

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


We report a new type of multibit per cell (MBPC) magnetic memory wherein the movement and position of domain wall (DW) can be controlled precisely using spin polarized current. Out of two investigated configurations, the one with in-plane magnetization offers faster DW motion, and hence is suitable for high-speed applications, although stability may be an issue. In contrast, stable DWs were observed in the perpendicular configuration. Furthermore, the DW position can be controlled through a sequence of pulses with different magnitudes. Controlling the DW position offers a novel MBPC magnetic memory with high performance compared to other solid state memories.

Original languageEnglish
Pages (from-to)1347-1351
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - Mar 2014

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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