MRAM device incorporating single-layer switching via rashba-induced spin torque

Jie Guo*, Seng Ghee Tan, Mansoor Bin Abdul Jalil, Kwaku Eason, Sunny Yan Hwee Lua, Sbiaa Rachid, Hao Meng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2× 108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory.

Original languageEnglish
Article number6027645
Pages (from-to)3868-3871
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number10
Publication statusPublished - Oct 2011
Externally publishedYes


  • Magnetic RAM (MRAM)
  • Rashba spin-orbit interaction
  • spin transfer torque (STT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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