Model for Mn in 6H-SiC from first-principle studies

M. Al Azri*, M. Elzain, K. Bouziane, S. M. Chérif, A. Declémy, L. Thomé

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The electronic and magnetic properties of 6H-SiC with Mn impurities have been calculated using generalized gradient approximation formalism. Various configurations of Mn sites and Si and C vacancies were considered. It was found that 6H-SiC doped with Mn atoms possess a moment for both types of substitution. The Mn atom at Si site possesses larger magnetic moment than Mn atom at C site. The energy levels appearing in the band gap due to vacancies and due to Mn impurities are determined and the calculated densities of states are used to analyze the different values of the magnetic moments for different types of substitution. A model that explains the magnetic moment at Mn site is proposed.

Original languageEnglish
Article number17C305
JournalJournal of Applied Physics
Issue number17
Publication statusPublished - May 7 2013

ASJC Scopus subject areas

  • General Physics and Astronomy


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