Features of a tunnel diode oscillator at different temperatures

S. Al-Harthi, A. Sellai*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Current-voltage measurements were performed on a tunnel diode (TD) and the basic features of the I-V characteristics were analyzed in the temperature range 100-300 K. Based on these characteristics, a TD-based oscillator is designed and simulated using circuit analysis software (PSpice). It is shown, in particular, that the amplitude and the frequency of the obtained sinusoidal waveforms can be practically temperature independent provided that the diode is adequately biased in its negative conductance region.

Original languageEnglish
Pages (from-to)817-822
Number of pages6
JournalMicroelectronics Journal
Issue number8-9
Publication statusPublished - Aug 2007


  • I-V-T characteristics
  • Oscillator
  • Spice simulation
  • Tunneling diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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