Electron transport in liquid silicon and germanium

S. M. Mujibur Rahman*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report on the electrical resistivity and thermoelectric power of liquid Si and Ge. The basic ingredients of the calculations are obtained by using a variational procedure based on a third-order perturbation theory. In the calculations we employ an on-Fermi-sphere model potential suitable for these systems. The reference structure factors used in the final calculations are obtained by introducing softness in the hard-sphere description of the structure factors through a scaling procedure. The calculated resistivities and thermoelectric power are comparable to the experimental as well as to the available theoretical results.

Original languageEnglish
Pages (from-to)391-398
Number of pages8
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Issue number5
Publication statusPublished - May 1986

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)


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