Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1-xNx Schottky diodes

A. Teffahi*, D. Hamri, A. Mostefa, A. Saidane, N. Al Saqri, J. F. Felix, M. Henini

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-voltage-frequency (G/ω-V-f) measurements at room temperature are used to study 50 kGy 60Co γ-ray electrical properties irradiation dependence of Ti/Au/GaAs1-xNx Schottky diodes with 0.2%; 0.4%; 0.8% and 1.2% nitrogen dilution. This γ-ray irradiation induces a permanent damage that has increased ideality factor and series resistance for all samples. It was accompanied by a decrease in Schottky barrier height with nitrogen content up to 0.4%N and remained constant thereafter. Radiation was also found to degrade the reverse leakage current. At high frequency (1 MHz), capacitance and conductance decreased after radiation due to a decrease in net doping concentration. Interface state density and series resistance were determined from C-V-f and G/ω-V-f characteristics using Hill-Coleman methods. Interface states density exponentially decreased with increasing frequency confirming the behavior of interface traps response to ac signal. Series resistance increases after irradiation is attributed to carrier's removal effect and mobility degradation. It has two peaks in the accumulation and inversion region for some diodes (0.4%N, 0.8%N). γ-ray irradiation produced traps levels and recombination centers that reduce relaxation time. An increase in %N content can impede irradiation damage with even some compensation when the percent of diluted nitrogen is high (1.2%N).

Original languageEnglish
Pages (from-to)850-858
Number of pages9
JournalCurrent Applied Physics
Issue number8
Publication statusPublished - Aug 1 2016


  • C-V-f
  • G/ω-V-f measurements
  • I-V
  • Ideality factor
  • Schottky diode
  • γ-ray irradiation

ASJC Scopus subject areas

  • General Materials Science
  • General Physics and Astronomy


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