Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1049/el:19900040

Double-Barrier Resonant Tunnelling Diode Three-State Logic

A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

Original language	English
Pages (from-to)	61-62
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	1
DOIs	https://doi.org/10.1049/el:19900040
Publication status	Published - 1990

Keywords

Logic circuits
Logic devices
Multivalued logic
Resonant tunnelling
Semiconductor devices and materials
Superlattices
Tunnel diodes

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19900040

Cite this

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title = "Double-Barrier Resonant Tunnelling Diode Three-State Logic",

abstract = "Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.",

keywords = "Logic circuits, Logic devices, Multivalued logic, Resonant tunnelling, Semiconductor devices and materials, Superlattices, Tunnel diodes",

author = "A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

doi = "10.1049/el:19900040",

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pages = "61--62",

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T1 - Double-Barrier Resonant Tunnelling Diode Three-State Logic

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990

Y1 - 1990

N2 - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

AB - Primary three-state logic circuits (inverters, OR gates and flip-flops) have been produced using double-barrier GaAs/AlGaAs resonant tunnelling diodes. Circuit details, waveforms and three-state logic operations are described.

KW - Logic circuits

KW - Logic devices

KW - Multivalued logic

KW - Resonant tunnelling

KW - Semiconductor devices and materials

KW - Superlattices

KW - Tunnel diodes

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Double-Barrier Resonant Tunnelling Diode Three-State Logic

Abstract

Keywords

ASJC Scopus subject areas

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