Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville; S. H. Al-Harthi; M. G. Dowsett; F. S. Gard; T. J. Ormsby; B. Guzman; T. C.Q. Noakes; P. Bailey

doi:10.1116/1.1491987

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville^*, S. H. Al-Harthi, M. G. Dowsett, F. S. Gard, T. J. Ormsby, B. Guzman, T. C.Q. Noakes, P. Bailey

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

Original language	English
Pages (from-to)	1690-1698
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1116/1.1491987
Publication status	Published - Jul 2002
Event	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States Duration: Jan 6 2002 → Jan 10 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1491987

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McConville, C. F., Al-Harthi, S. H., Dowsett, M. G., Gard, F. S., Ormsby, T. J., Guzman, B., Noakes, T. C. Q., & Bailey, P. (2002). Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1690-1698. https://doi.org/10.1116/1.1491987

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. / McConville, C. F.; Al-Harthi, S. H.; Dowsett, M. G. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1690-1698.

Research output: Contribution to journal › Conference article › peer-review

McConville, CF, Al-Harthi, SH, Dowsett, MG, Gard, FS, Ormsby, TJ, Guzman, B, Noakes, TCQ & Bailey, P 2002, 'Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, pp. 1690-1698. https://doi.org/10.1116/1.1491987

@article{f5eb6d4459354a2e9b1ac4f392414acd,

title = "Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering",

abstract = "An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.",

author = "McConville, {C. F.} and Al-Harthi, {S. H.} and Dowsett, {M. G.} and Gard, {F. S.} and Ormsby, {T. J.} and B. Guzman and Noakes, {T. C.Q.} and P. Bailey",

year = "2002",

month = jul,

doi = "10.1116/1.1491987",

language = "English",

volume = "20",

pages = "1690--1698",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces ; Conference date: 06-01-2002 Through 10-01-2002",

}

TY - JOUR

T1 - Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

AU - McConville, C. F.

AU - Al-Harthi, S. H.

AU - Dowsett, M. G.

AU - Gard, F. S.

AU - Ormsby, T. J.

AU - Guzman, B.

AU - Noakes, T. C.Q.

AU - Bailey, P.

PY - 2002/7

Y1 - 2002/7

N2 - An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

AB - An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

UR - http://www.scopus.com/inward/record.url?scp=0035982604&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035982604&partnerID=8YFLogxK

U2 - 10.1116/1.1491987

DO - 10.1116/1.1491987

M3 - Conference article

AN - SCOPUS:0035982604

SN - 1071-1023

VL - 20

SP - 1690

EP - 1698

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces

Y2 - 6 January 2002 through 10 January 2002

ER -

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

Abstract

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