Density of surface states in Pd/SiGe/Si interface from capacitance measurements

A. Sellai*, M. Mamor, S. Al-Harthi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Original languageEnglish
Pages (from-to)765-768
Number of pages4
JournalSurface Review and Letters
Issue number4
Publication statusPublished - Aug 2007


  • Capacitance spectroscopy
  • Interface states
  • Schottky barrier

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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