TY - GEN
T1 - Class-F power amplifier with high power added efficiency for 900MHz
AU - Al-Blushi, A.
AU - Al-Mamari, R.
AU - Nadir, Z.
AU - Bait-Suwailam, M.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2011/1/20
Y1 - 2011/1/20
N2 - This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.
AB - This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.
KW - Class-F
KW - GSM Frequencies
KW - Power amplifier
KW - high Efficiency. GaAs
UR - http://www.scopus.com/inward/record.url?scp=84949924734&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84949924734&partnerID=8YFLogxK
U2 - 10.1109/ICED.2014.7015786
DO - 10.1109/ICED.2014.7015786
M3 - Conference contribution
AN - SCOPUS:84949924734
T3 - 2014 2nd International Conference on Electronic Design, ICED 2014
SP - 137
EP - 142
BT - 2014 2nd International Conference on Electronic Design, ICED 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 2nd International Conference on Electronic Design, ICED 2014
Y2 - 19 August 2014 through 21 August 2014
ER -