Annealing effect on the structural and magnetic properties of MN-implanted 6h-sic

Maya Al Azri*, Khalid Bouziane, Mohamed Elzain, Salim M. Chérif, Alain Declémy, Lionel Thomé, Michel Viret

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


n-type 6H-SiC(0001) substrates were implanted with a fluence of Mn+ 5 × 1016) (maximum Mn content of 7%), with implantation energy of 80 keV and substrate temperature of 365 °C to promote recrystallization. The samples were characterized using Rutherford backscattering and channeling (RBS/C) spectroscopy and electron probe microanalysis in the energy dispersive X-ray (EPMA-EDX) technique; while the magnetization was studied using a superconducting quantum interference device techniques. In the as-implanted sample, three well-defined specific defect zones were identified as deduced from the analysis of RBS/C spectra. It is shown that the two main vacancy-related and interstitial-related defects undergo limited changes when annealing at 800 °C, while a major recovery is obtained after annealing at 1100 °C. Strain relaxation was also observed upon annealing as determined from HRXRD. Magnetization was strongly reduced with increasing annealing temperature from 800 °C to 1600 °C. This effect seems to be related to the dilution effect (reduction of Mn content) due to the local diffusion of Mn as suggested from the results obtained using both RBS/C and EPMA-EDX techniques.

Original languageEnglish
Article number6971661
JournalIEEE Transactions on Magnetics
Issue number11
Publication statusPublished - Nov 1 2014


  • Annealing effect
  • diluted magnetic semiconductors (DMSs)
  • implantation
  • silicon carbide (SiC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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