TY - CHAP
T1 - A multi-state memory device based on the Manipulation of a single skyrmion using spin-polarized current
AU - Al Saidi, W.
AU - Sbiaa, R.
AU - Laurel, Stan
AU - Tiercelin, N.
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023/5/1
Y1 - 2023/5/1
N2 - Towards a multistate skyrmionic device, Firstly, the motion of a single skyrmion under spin-transfer-torque (STT) is studied in the conventional and constricted wire the study reveals the possibility to pin, depin and annihilate skyrmion. Later, a stepped nano-track with bottom and top confinements has been proposed, to stabilize the skyrmion in each confinement. The adjustment of the current density magnitude and its duration enabled the displacement of the skyrmion at any position. More interestingly, it was observed that only one skyrmion can be stabilized in each confinement when a large number is displaced by current pulses. These results open the way for large-capacity memory devices and neuromorphic computing.
AB - Towards a multistate skyrmionic device, Firstly, the motion of a single skyrmion under spin-transfer-torque (STT) is studied in the conventional and constricted wire the study reveals the possibility to pin, depin and annihilate skyrmion. Later, a stepped nano-track with bottom and top confinements has been proposed, to stabilize the skyrmion in each confinement. The adjustment of the current density magnitude and its duration enabled the displacement of the skyrmion at any position. More interestingly, it was observed that only one skyrmion can be stabilized in each confinement when a large number is displaced by current pulses. These results open the way for large-capacity memory devices and neuromorphic computing.
KW - Ferromagnetic materials
KW - Micromagnetics
KW - Skyrmion
KW - spin systems
KW - spintronics
UR - http://www.scopus.com/inward/record.url?scp=85172731175&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85172731175&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/7371e8d3-67d0-3d24-b014-f46fb043480f/
U2 - 10.1109/intermagshortpapers58606.2023.10228670
DO - 10.1109/intermagshortpapers58606.2023.10228670
M3 - Chapter
AN - SCOPUS:85172731175
SN - 9798350338362
T3 - 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
BT - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Y2 - 15 May 2023 through 19 May 2023
ER -