Nanowires for low power and high capacity storage memory

The project will aim to show a proof of concept of a functional random access memory with more than one bit per cell. The memory is based on a magnetic nanowire with different nano-constrictions. The proposed writing mechanism of the data is based on injecting a spin-polarized current through the nanowire for creating and moving a magnetic domain wall. The position of the domain wall and its speed will be analyzed by electrical measurement combined with a high-resolution Kerr microscopy. The reading will be realized by sensing the position of the domain wall in the memory layer with respect to a reference layer.