Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz; Jorlandio F. Felix; Dler Jameel; Noor Al Saqri; Faisal S. Al Mashary; Haifaa M. Alghamdi; Hind M.A. Albalawi; David Taylor; Mohamed Henini

doi:10.1016/j.spmi.2015.08.028

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz, Jorlandio F. Felix, Dler Jameel, Noor Al Saqri, Faisal S. Al Mashary, Haifaa M. Alghamdi, Hind M.A. Albalawi, David Taylor, Mohamed Henini^*

^*المؤلف المقابل لهذا العمل

Physics

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

5 اقتباسات (Scopus)

ملخص

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

اللغة الأصلية	English
الصفحات (من إلى)	80-89
عدد الصفحات	10
دورية	Superlattices and Microstructures
مستوى الصوت	88
المعرِّفات الرقمية للأشياء	https://doi.org/10.1016/j.spmi.2015.08.028
حالة النشر	Published - ديسمبر 1 2015

ASJC Scopus subject areas

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الوصول إلى المستند

10.1016/j.spmi.2015.08.028

الملفات والروابط الأخرى

قم بذكر هذا

Aziz, M., Felix, J. F., Jameel, D., Al Saqri, N., Al Mashary, F. S., Alghamdi, H. M., Albalawi, H. M. A., Taylor, D., & Henini, M. (2015). Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures. Superlattices and Microstructures, 88, 80-89. https://doi.org/10.1016/j.spmi.2015.08.028

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures. / Aziz, Mohsin; Felix, Jorlandio F.; Jameel, Dler وآخرون.
في: Superlattices and Microstructures, المجلد 88, ٠١.١٢.٢٠١٥, صفحة 80-89.

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

Aziz, M, Felix, JF, Jameel, D, Al Saqri, N, Al Mashary, FS, Alghamdi, HM, Albalawi, HMA, Taylor, D & Henini, M 2015, 'Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures', Superlattices and Microstructures, المجلد 88, الصفحات 80-89. https://doi.org/10.1016/j.spmi.2015.08.028

@article{d54c5f38f8074bdda1fd7d8a7788f659,

title = "Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures",

abstract = "The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.",

keywords = "CV, DLTS, Furnace annealing, IV, Rapid thermal annealing",

author = "Mohsin Aziz and Felix, {Jorlandio F.} and Dler Jameel and {Al Saqri}, Noor and {Al Mashary}, {Faisal S.} and Alghamdi, {Haifaa M.} and Albalawi, {Hind M.A.} and David Taylor and Mohamed Henini",

note = "Funding Information: The authors would like to thank the Brazilian funding agencies through grants from CAPES and CNPq for supporting this project, particularly under the research grant number 472492/2013-6 . Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd. All rights reserved.",

year = "2015",

month = dec,

day = "1",

doi = "10.1016/j.spmi.2015.08.028",

language = "English",

volume = "88",

pages = "80--89",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Rapid thermal annealing

T2 - An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

AU - Aziz, Mohsin

AU - Felix, Jorlandio F.

AU - Jameel, Dler

AU - Al Saqri, Noor

AU - Al Mashary, Faisal S.

AU - Alghamdi, Haifaa M.

AU - Albalawi, Hind M.A.

AU - Taylor, David

AU - Henini, Mohamed

N1 - Funding Information: The authors would like to thank the Brazilian funding agencies through grants from CAPES and CNPq for supporting this project, particularly under the research grant number 472492/2013-6 . Publisher Copyright: © 2015 Elsevier Ltd. All rights reserved.

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

AB - The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

KW - CV

KW - DLTS

KW - Furnace annealing

KW - IV

KW - Rapid thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=84949521776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949521776&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2015.08.028

DO - 10.1016/j.spmi.2015.08.028

M3 - Article

AN - SCOPUS:84949521776

SN - 0749-6036

VL - 88

SP - 80

EP - 89

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

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ASJC Scopus subject areas

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