Morphology dependent electrical transport behavior in gold nanostructures

The mechanism of electron transport in ultra-thin gold films is investigated and its dependence on the gold islands size is reported. For gold films of thickness below 38 nm, the electrical transport occurs by tunneling within electrically discontinuous islands of gold. Simmons model for metal-insulator-metal junction describes the non-ohmic experimental current-voltage curves obtained by means of conductive atomic force microscopy. Field emission is the predominant transport for thicknesses below 23 nm while direct tunneling occurs in thicker films. The transition between the two regimes is controlled by the gold islands size and their inter-distance.