Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby, B. Guzmán, F. S. Gard, T. C.Q. Noakes, P. Bailey, C. F. McConville*

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةمقالمراجعة النظراء

6 الاقتباسات (SciVal)

ملخص

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

اللغة الأصليةEnglish
الصفحات (من إلى)1-4
عدد الصفحات4
دوريةPhysical Review B - Condensed Matter and Materials Physics
مستوى الصوت65
رقم الإصدار11
المعرِّفات الرقمية للأشياء
حالة النشرPublished - مارس 15 2002

ASJC Scopus subject areas

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  • ???subjectarea.asjc.3100.3104???

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