Electrostatic fringing-fields effects on the structural behavior of MEMS shallow arches

Hassen M. Ouakad*

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةمقالمراجعة النظراء

39 اقتباسات (Scopus)


In this paper, we investigate the effects of electric fringing-fields on the structural behavior of a MEMS shallow arch. We consider the Galerkin method-based reduced-order modeling to discretize the governing nonlinear equation and obtain a lumped-parameter model of the system. We then assume two most well-known models for demonstrating the fringing-fields effects, that is the Palmer’s and the Mejis-Fokkema models. Using the discretized model, we investigate the system nonlinear behavior assuming the two electric fringing-fields models. The presented results show that for these particular cases of arch configuration, fringing-fields effects should be considered since it improves the prediction of corresponding voltages for both snap-through and pull-in structural instabilities as well as the overall static deflection of the MEMS arch. Comparisons of the acquired numerical results with some available experimental data as well as ANSYS® based finite-elements simulations confirm that neglecting the fringing-fields effects in MEMS arches can represent a significant source of error which should be avoided using much more accurate modeling techniques.

اللغة الأصليةEnglish
الصفحات (من إلى)1391-1399
عدد الصفحات9
دوريةMicrosystem Technologies
مستوى الصوت24
رقم الإصدار3
المعرِّفات الرقمية للأشياء
حالة النشرPublished - مارس 1 2018
منشور خارجيًانعم

ASJC Scopus subject areas

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  • ???subjectarea.asjc.3100.3104???
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