Effect of temperature and inhomogeneity on the yield of PtSi-n-Si photodetectors

A. Sellai*, P. Dawson

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةConference articleمراجعة النظراء

10 اقتباسات (Scopus)


The temperature dependence of the current-voltage characteristics of a PtSi/Si Schottky detector is investigated between 20 and 300 K, a temperature range that is much wider than what is usually reported in literature. The data is satisfactorily interpreted on the basis of a thermionic emission mechanism across an inhomogeneous barrier. The Schottky barrier inhomogeneities are shown to obey a single Gaussian distribution with a mean barrier height of 0.76 eV and a standard deviation of 30 meV at zero bias. The calculated detector's efficiency, while taking the barrier distribution into account, shows an increase with decreasing temperature that can be considered overall as marginal but becomes much more significant below 60 K and at wavelengths near the cut-off edge.

اللغة الأصليةEnglish
الصفحات (من إلى)166-170
عدد الصفحات5
دوريةJournal of Crystal Growth
مستوى الصوت288
رقم الإصدار1
المعرِّفات الرقمية للأشياء
حالة النشرPublished - فبراير 2 2006
الحدثInternational Conference on Materials for Advanced Technologies -
المدة: يوليو ٤ ٢٠٠٥يوليو ٨ ٢٠٠٥

ASJC Scopus subject areas

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  • ???subjectarea.asjc.1600.1604???
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