TY - GEN
T1 - On the plasmonic Schottky photovoltaic devices
AU - Sellai, Azzouz
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/5
Y1 - 2019/5
N2 - Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.
AB - Two aspects that have been overlooked in the published literature in relation to plasmonic Schottky junction photovoltaic devices are addressed in the present contribution. They concern the effect, on the overall efficiency, of an existing interfacial layer with optical properties different from those of the bulk and the spatial fluctuations in the potential barrier between the metal and the semiconductor.
KW - Metal-semiconductor contacts
KW - Schottky devices
KW - Solar cells
KW - Surface plasmons
UR - http://www.scopus.com/inward/record.url?scp=85072758828&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072758828&partnerID=8YFLogxK
U2 - 10.1109/PN.2019.8819524
DO - 10.1109/PN.2019.8819524
M3 - Conference contribution
AN - SCOPUS:85072758828
T3 - 2019 Photonics North, PN 2019
BT - 2019 Photonics North, PN 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Photonics North, PN 2019
Y2 - 21 May 2019 through 23 May 2019
ER -