A charge pumping technique based on variable gate pulse parameters has been demonstrated for sub-micron MOSFETs. The experimental results obtained show the existence of a peak in the charge pumping current for different gate pulse widths and different frequencies. Its magnitude increases at higher frequencies and shorter pulse widths. The developed measurement approach is very suitable for characterizing small MOSFETs when optimal conditions for both gate pulse width and frequency are set for maximum charge pumping current.
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